Monash University researchers have captured the exact atomic movements that write data to next-generation memory devices, ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...

As artificial intelligence (AI) continues to advance, researchers have identified a breakthrough that could make AI technologies faster and more efficient. As artificial intelligence (AI) continues to ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...

If you’ve noticed that your next smartphone, laptop, or PC upgrade suddenly costs noticeably more than it did a year ago, you’re seeing the effects of the 2026 memory supply shortage play out in real ...

This study addresses key open questions in ferroelectric tunnel junction research, including how device scaling influences conduction mechanisms and memory performance. Shrinking ferroelectric tunnel ...